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ZXMC10A816N8
Electrical Characteristics Q2 P-Channel (@T A = +25°C, unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-100
—
—
-2.0
—
—
—
—
—
-0.5
100
-3.0
V
μA
nA
V
I D = -250μA, V GS = 0V
V DS = -100V, V GS = 0V
V GS = ? 20V, V DS = 0V
I D = -250μA, V DS = V GS
Static Drain-Source On-State Resistance
(a)
R DS(ON)
—
0.170
0.250
0.235
0.320
?
V GS = -10V, I D = -1.0A
V GS = -4.5V, I D = -0.5A
Forward Transconductance
(a) (c)
g fs
—
4.7
—
S
V DS = -15V, I D = -2.1A
Dynamic Capacitance
(c)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
—
—
—
717
55
46
—
—
—
pF
pF
pF
V DS = -50V, V GS = 0V
f = 1MHz
Switching
(b) (c)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
—
—
—
—
4.3
5.2
20
12
—
—
—
—
ns
ns
ns
ns
V DD = -50V, V GS = -10V
I D = -1A
R G ? 6.0 ? ,
Gate Charge
(c)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
—
—
—
16.5
2.5
5.4
—
—
—
nC
nC
nC
V DS = -50V, V GS = -10V
I D = -2.1A
Source–Drain Diode
Diode Forward Voltage
(a)
V SD
—
-0.85
-0.95
V
I S = -1.7A, V GS = 0V
Reverse Recovery Time
(c)
Reverse Recovery Charge
(c)
t rr
Q rr
—
—
43
77
—
—
ns
nC
I S = -1.7A, di/dt = 100A/ ? s
Gate Resistance
Gate Resistance
R G
0
—
100
?
V DS = 0V, V GS = 0V, f = 1.0MHz
Notes:
(a) Measured under pulsed conditions. Pulse width ? 300 ? s; duty cycle ? 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing.
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
7 of 11
www.diodes.com
March 2013
? Diodes Incorporated
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